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De Allemagne vers France Description de l'article : Springer-Verlag Gmbh Feb 2008, 2008. Book is in Used-Good condition. Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems.
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Power semiconductor devices are widely used for the control and management of electrical energy. About this Item: Uni-Edition, 2014. We would like to thank Jayant Haritsa and Ramamohanarao Kotagiri for putting together a world-classProgramCommittee. D-Bookstore is an effective tool for digital or electronic distribution of content owned by conventional print publishers. You can use multiple filter mechanisms to choose content specific to subject or author or institution or syllabus or publisher. D-Bookstore enables individual authors, institutions and conventional publishers to quickly make their work available to consumers worldwid. It only takes you to a journey where every incident has a scientific and cosmic reason.
The concept of metamaterial antenna array is also presented. Buy with confidence, excellent customer service!. Contributors who will be reading include: Joan Corwin, J. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures.